Matrix: Model 303 Plasma Etcher for etching Oxides Nitrides Silicon or Photoresist Descum
-4″or 6” wafer process equipment
Matrix 303 dry etcher General Description
The Matrix 303 is an electro-mechanical production system used to etch materials such as nitride, oxide, polysilicon,etc. from the surface of silicon or other substrates. Each wafer is processed individually by means of a chemical reaction induced by a gas plasma. The system consists of the following major assemblies:
Matrix 303 dry etching Main console
-Operator Interface Module
-Wafer Transport Module
-Card Reader Module
-Microprocessor Control Module
Matrix 303 plasma etching Power Supply Console
-RF Generator 600 watt 13.56 MHz
-Gas Distribution Panel
-Temperature/Pressure Control Module
Matrix 303 plasma etch vacuum Pump (Optional)
-Vacuum Hose and Connectors
The Matrix 303 offers the following features:
* SINGLE WAFER PROCESSING
* WAFER CAPABILITY: (100 mm), and (150 mm)
* CASSETTE HANDLING
* WAFER HANDLING: Robotic pick and place
* MICROPROCESSOR CONTROLLED
* MONOCHROMATOR FOR ENDPOINT DETECTION (Standard)
* TEMPERATURE CONTROL UNIT (TCU):
* DOT MATRIX PLASMA DISPLAY SCREEN
* MODULAR DESIGN
* PROGRAMMABLE DIAGNOSTICS
* PHASE MAGNITUDE TUNER
* BUTTERFLY-TYPE PRESSURE CONTROLLER
* PINS UP/DOWN
* MULTI-STEP PROCESSING
Matrix 303 semiconductor process equipment Principles of Operation
The system is process driven by user friendly commands or by the insertion of a programmed magnetic card. It functions in the following sequence:
-Matrix 303 Loading Transport
-One wafer at a time is robotically picked from a cassette, transported to and deposited in the reaction chamber. The chamber door closes and the chamber is automatically sealed from the atmosphere
-Matrix 303 Process
Through a series of microprocessor controlled operating steps, the wafer is processed, i.e., the desired material is etched. The processing steps include the following:
a) The chamber is evacuated to a preset pressure.
b) Gas flow to the chamber is initiated at a predetermined and process-selected controlled rate, and a process selected pressure is maintained.
c) A gas plasma is produced by exposing the appropriate gases to radio frequency energy from a generator operating at a frequency of 13.56 MHz.
d) Gas plasma reacts with the material to be etched to form gaseous by-products. These by-products are then removed from the chamber via the vacuum pump.
e) A special wavelength filter is used to monitor the plasma and determine the process endpoint. Either filter or timed endpoint can be used.
Matrix 303 Process Deactivation
When the processing of the wafer is completed, the power and gas flow are stopped. Nitrogen is then used to vent the chamber to atmospheric pressure.
Matrix 303 Unloading Transport
The wafer is robotically returned to its original position and orientation in the cassette. Subsequent wafers are similarly selected, transported, processed and returned to the cassette.
1.4 Matrix 303 Physical Specifications
Main Console Power Supply Console overall
WIDTH 25″ 25″ 25″
DEPTH 28″ 28″ 28″
HEIGHT 22″ 36″ 58″
WEIGHT 100 lbs 310 lbs 410 lbs
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