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Show transcribed image text Consider a typical silicon based transistor at room temperature biased in the saturation region. EBC doping is 1019, and 1015 respectively. Determine the reverse saturation current for the BC PN junction. Assuming VCE = 0.3 V. calculate Ic. Using the ideal diode equation, calculate the forward diffusion current in the BC junction diode. Finally, discuss and compare that value to IC. - what do you conclude from the results?