A new ozone jet generator which can supply high purity ozone beam was specially fabricated, and applied to the formation and characterization of oxide thin films. After careful investigation of SiO2 thin film formation on Si substrates using either ozone or molecular oxygen, it was confirmed that; i) an atomic oxygen generated at dissociation of ozone attacks a back bond of Si to form Si-O-Si bonding, ii) the suboxide (SiOx; x<2) formation at the SiO2/Si interface was suppressed by the ozone oxidation, and iii) a stable SiO2 film was formed by the ozone exposure at a higher substrate temperature (>about 300 °C). It was also confirmed that ozone exposure during surface analysis using an electron beam could diminish (and erase) sample charging even the thickness of a SiO2 sample is in the order of sub mm.
|出版ステータス||Published - 1998 1月 1|
|イベント||Proceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3 - Paris, Fr|
継続期間: 1998 6月 29 → 1998 7月 3
|Other||Proceedings of the 1998 3rd International Conference on Electric Charge in Solid Insulators, CSC'3|
|Period||98/6/29 → 98/7/3|
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