APPLICATIONS OF TECHNOLOGY:
- Maskless lithography
- X-ray production
- Minimizes lithographic exposure times
- Facilitates remote scanning
This technology provides techniques for patterned beamlet extraction. The beamlets can be either positive ions or electrons, and they may be produced with a diameter of one micrometer with interaperture spacings of 12 micrometers.
In maskless lithography, step-wise movement of the beamlets relative to the target substrate enables devices to be directly e-beam written. Ion beams may be directly written as well. The beamlets also may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans.
STATUS: Issued Patent #7609815 available at www.uspto.gov. Available for licensing or collaborative research.
SEE THESE OTHER BERKELEY LAB TECHNOLOGIES IN THIS FIELD:
Extraction System for Ion Sources, IB-1617
REFERENCE NUMBER: IB-2197